SSD02N60J-C Description
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
SSD02N60J-C Key Features
- Robust high voltage termination
- Avalanche energy specified
- Source-to-drain diode recovery time parable to a
- Diode is characterized for the use in bridge circuits
- IDSS and VDS are specified at the elevated temperature