SSD02N60J-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 2A, 600V, RDS(ON) 4.4Ω N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor control, these devices are particularly well suited for bridge...