SSD02N60J-C Datasheet (SeCoS Halbleitertechnologie GmbH)

Part SSD02N60J-C
Description N-Ch Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer SeCoS Halbleitertechnologie GmbH
Size 547.65 KB
SeCoS Halbleitertechnologie GmbH

SSD02N60J-C Overview

Description

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Key Features

  • Robust high voltage termination
  • Avalanche energy specified
  • Source-to-drain diode recovery time comparable to a discrete fast recovery diode
  • Diode is characterized for the use in bridge circuits