* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.
SSD02N60SL Datasheet (559.33 KB)
SSD02N60SL
SeCoS
559.33 KB
N-channel mosfet.
Elektronische Bauelemente SSD02N60SL 2A , 600V , RDS(ON) 4.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
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