SSD30N10J
Overview
SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently. It also offers a drain-to-source diode fast recovery time.
- GE MARKING CJU30N10 = Date Code
| Part | SSD30N10J |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Size | 269.81 KB |
Related Datasheets
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| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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