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SSD30N10J Datasheet Preview

SSD30N10J Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SSD30N10J
30A, 100V, RDS(ON) 31m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
SSD30N10J is designed to stand high energy in the
avalanche mode and switch efficiently. It also offers a
drain-to-source diode fast recovery time. It is designed
for high voltage, high speed switching applications such
as power supplies, converters, power motor controls and
bridge circuits.
TO-252(D-Pack)
FEATURES
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
A
B
C
D
GE
MARKING
CJU30N10
= Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSD30N10J
Lead (Pb)-free
SSD30N10J-C Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Energy 1
EAS
Power Dissipation
Lead Temperature for Soldering Purposes
@1/8’’ from case for 10s
Operating Junction & Storage Temperature Range
PD
TL
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient
RθJA
http://www.SeCoSGmbH.com/
29-Apr-2020 Rev. A
K HF
N
O
P
M
J
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.30 6.90 J 2.30 REF.
B 4.95 5.53 K 0.89 REF.
C 2.10 2.50 M 0.45 1.14
D 0.40 0.90 N 1.55 TYP.
E
6
7.70 O
0
0.15
F
2.90 REF
P 0.58 REF.
G 5.40 6.40
H 0.60 1.20
2
Drain
1
Gate
3
Source
Ratings
100
±20
30
120
156
1.25
260
150, -55~150
Unit
V
V
A
A
mJ
W
°C
100
°C/W
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SSD30N10J Datasheet Preview

SSD30N10J Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSD30N10J
30A, 100V, RDS(ON) 31m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
Gate Threshold Voltage 2
Forward Transconductance 2
V(BR)DSS
100
-
-
VGS(th)
1.3
-
2.5
gfs
-
15
-
Gate-Source Leakage Current
IGSS
-
-
±100
Drain-Source Leakage Current
IDSS
-
Static Drain-Source On-Resistance 2
RDS(ON)
-
-
1
24
31
Total Gate Charge
Qg
-
39
-
Gate-Source Charge
Qgs
-
8
-
Gate-Drain Change
Qgd
-
12
-
Turn-on Delay Time
Td(on)
-
7
-
Rise Time
Tr
-
7
-
Turn-off Delay Time
Td(off)
-
29
-
Fall Time
Tf
-
7
-
Input Capacitance
Ciss
-
2000
-
Output Capacitance
Coss
-
300
-
Reverse Transfer Capacitance
Crss
-
250
-
Source-Drain Diode
Diode Forward Voltage 2
VSD
-
-
1.2
Continuous Source Current
IS
-
-
30
Pulsed Source Current
ISM
-
-
120
Notes:
1. EAS condition: VDD=50V, L=0.5mH, RG=25, Starting TJ=25°C.
2. Pulse Test: Pulse width300µs, duty cycle2%.
Unit
V
V
S
nA
µA
m
nC
Test Conditions
VGS=0V, ID=250µA
VDS=VGS, ID=250µA
VDS=5V, ID=10A
VGS= ±20V
VDS=80V, VGS=0V
VGS=10V, ID=15A
ID=10A
VDS=50V
VGS=10V
VDD=30V
ID=2A
nS
VGS=10V
RG=3
RL=5
VGS=0V
pF
VDS=25V
f=1MHz
V
IS=15A, VGS=0V
A
A
http://www.SeCoSGmbH.com/
29-Apr-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3



Part Number SSD30N10J
Description N-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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