* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 50N03 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A BC D 1 Gate GE 2 Drain 3 Source K HF MJ N O P REF. M
SSD50N03 Datasheet (335.64 KB)
SSD50N03
SeCoS
335.64 KB
N-channel mosfet.
Elektronische Bauelemente SSD50N03 51A , 30V , RDS(ON) 9mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halo.
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