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SSD50N10 - N-Ch Enhancement Mode Power MOSFET

Description

The SSD50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available.

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Datasheet preview – SSD50N10

Datasheet Details

Part number SSD50N10
Manufacturer SeCoS
File Size 1.33 MB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSD50N10 Datasheet
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Full PDF Text Transcription

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Elektronische Bauelemente SSD50N10 50A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 50N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A B C D 1 Gate GE 2 Drain 3 Source K HF N O P M J REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.
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