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SSD50N10-C - N-Ch Enhancement Mode Power MOSFET

General Description

The SSD50N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.

Key Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt Effect Decline.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD50N10-C 50A, 100V, RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD50N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Excellent CdV/dt Effect Decline  100% EAS Guaranteed  Green Device Available MARKING 50N10   = Date Code TO-252(D-Pack) PACKAGE INFORMATION Package MPQ TO-252 2.