SSD50N10-C N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSD50N10-C 50A, 100V, RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The SSD50N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most.

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SSD50N10-C Datasheet Preview — Preview of SSD50N10-C PDF

Datasheet Specifications

Part number: SSD50N10-C
Manufacturer: SeCoS
File Size: 0.97 MB
Datasheet: SSD50N10-C-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Excellent CdV/dt Effect Decline
* 100% EAS Guaranteed
* Green Device Available MARKING 50N10   = Date Code TO-252(D-Pack) PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER

SSD50N10-C Distributors

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SSD50N10-C N-Ch Enhancement Mode Power MOSFET SeCoS

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