* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Excellent CdV/dt Effect Decline
* 100% EAS Guaranteed
* Green Device Available MARKING 50N10 = Date Code TO-252(D-Pack) PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER
SSD50N10-C Datasheet (0.97 MB)
SSD50N10-C
SeCoS
0.97 MB
N-ch enhancement mode power mosfet.
Elektronische Bauelemente SSD50N10-C 50A, 100V, RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
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