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SSD50N10-C - N-Ch Enhancement Mode Power MOSFET

Description

The SSD50N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt Effect Decline.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number SSD50N10-C
Manufacturer SeCoS
File Size 0.97 MB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSD50N10-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SSD50N10-C 50A, 100V, RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD50N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Excellent CdV/dt Effect Decline  100% EAS Guaranteed  Green Device Available MARKING 50N10   = Date Code TO-252(D-Pack) PACKAGE INFORMATION Package MPQ TO-252 2.
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