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SSD61N60SG Datasheet Preview

SSD61N60SG Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SSD61 60SG
61A, 60V, RDS(O ) 9mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD61N60SG is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent RDS(ON) and gate charge for most of the
synchronous buck converter applications.
The SSD61N60SG meet the RoHS and Green Product with
Function reliability approved.
TO-252(D-Pack)
FEATURES
RDS(on)9mΩ @VGS=10V
RDS(on)13mΩ @VGS=4.5V
High speed power switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
TO-252 Package
MARKING
61N60SG
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
BC
D
GE
1
Gate
2
Drain
3
Source
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.9 J
2.3 REF.
B 4.95 5.53 K 0.89 REF.
C 2.1 2.5 M 0.45 1.14
D 0.41 0.9 N
1.55 Typ.
E6
7.5 O 0 0.13
F 2.90 REF P 0.58 REF.
G 5.4 6.4
H 0.6 1.2
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Silicon Limited)
TC=25°C
TC=100°C
ID
Continuous Drain Current (Package Limited) TC=25°C
Pulsed Drain Current
IDM
Avalanche Energy, Single Pulse, @L=0.4mH TC=25°C
EAS
Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
Ratings
60
±20
61
43
40
270
20
75
-55 ~ 175
65
2
Unit
V
V
A
A
mJ
W
°C
°C / W
http://www.SeCoSGmbH.com/
03-Aug-2017 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SSD61N60SG Datasheet Preview

SSD61N60SG Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSD61 60SG
61A, 60V, RDS(O ) 9mΩ
-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Drain-Source Breakdown Voltage
BVDSS
60 -
-
Gate Threshold Voltage
VGS(th)
1 1.8 2.4
Forward Transfer conductance
gfs - 26 -
Gate-Source Leakage Current
IGSS - - ±100
TJ=25°C
Drain-Source Leakage Current
TJ=100°C
IDSS
- -1
- - 100
Static Drain-Source On-Resistance
RDS(ON)
- 7.3 9
- 10 13
Total Gate Charge
Qg - 24 -
Total Gate Charge
Qg - 12 -
Gate-Source Charge
Qgs - 5 -
Gate-Drain (“Miller”) Change
Qgd - 3 -
Turn-on Delay Time
Td(on)
-9-
Rise Time
Tr - 4 -
Turn-off Delay Time
Td(off)
- 29 -
Fall Time
Tf - 4 -
Input Capacitance
Ciss - 1620 -
Output Capacitance
Coss
- 415 -
Reverse Transfer Capacitance
Crss
-3
Source-Drain Diode
-
Forward On Voltage
VSD - 0.9 1.2
Reverse Recovery Time
Trr - 30 -
Reverse Recovery Charge
Qrr - 43 -
Unit
Test conditions
V VGS=0, ID=250µA
V VDS=VGS, ID=250µA
S VDS=5V, ID=20A
nA VGS=±20V
VDS=60V, VGS=0
µA
VDS=60V, VGS=0
mΩ VGS=10V, ID=20A
mΩ VGS=4.5V, ID=20A
VGS=10V
VGS=4.5V
nC
ID=20A
VDD=30V
VGS=10V
VDD=30V
nS
ID=20A
VGS=10V
RG=10Ω
VGS=0
pF VDS=30V
f=1.0MHz
V IF=20A, VGS=0
nS
VR=30V, IF=20A, dl/dt=300A/µs
nC
http://www.SeCoSGmbH.com/
03-Aug-2017 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SSD61N60SG
Description N-Channel MOSFET
Maker SeCoS
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