Elektronische Bauelemente
SSD61 60SG
61A, 60V, RDS(O ) 9mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD61N60SG is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent RDS(ON) and gate charge for most of the
synchronous buck converter applications.
The SSD61N60SG meet the RoHS and Green Product with
Function reliability approved.
TO-252(D-Pack)
FEATURES
RDS(on)≦9mΩ @VGS=10V
RDS(on)≦13mΩ @VGS=4.5V
High speed power switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
TO-252 Package
MARKING
61N60SG
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
BC
D
GE
1
Gate
2
Drain
3
Source
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.9 J
2.3 REF.
B 4.95 5.53 K 0.89 REF.
C 2.1 2.5 M 0.45 1.14
D 0.41 0.9 N
1.55 Typ.
E6
7.5 O 0 0.13
F 2.90 REF P 0.58 REF.
G 5.4 6.4
H 0.6 1.2
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Silicon Limited)
TC=25°C
TC=100°C
ID
Continuous Drain Current (Package Limited) TC=25°C
Pulsed Drain Current
IDM
Avalanche Energy, Single Pulse, @L=0.4mH TC=25°C
EAS
Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
Ratings
60
±20
61
43
40
270
20
75
-55 ~ 175
65
2
Unit
V
V
A
A
mJ
W
°C
°C / W
http://www.SeCoSGmbH.com/
03-Aug-2017 Rev. A
Any changes of specification will not be informed individually.
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