Download SSD61N60SG Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SSD61N60SG
SSD61N60SG is N-Channel MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION The SSD61N60SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD61N60SG meet the Ro HS and Green Product with Function reliability approved. TO-252(D-Pack) FEATURES RDS(on)≦9mΩ @VGS=10V RDS(on)≦13mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-252 Package MARKING 61N60SG Date Code PACKAGE INFORMATION Package TO-252 2.5K Leader Size 13 inch A BC Gate Drain Source K HF MJ REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.41 0.9 N 1.55 Typ. E6 7.5 O 0...