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SSD61N60SG - N-Channel MOSFET

General Description

The SSD61N60SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSD61N60SG meet the RoHS and Green Product with Function reliability approved.

Key Features

  • RDS(on)≦9mΩ @VGS=10V RDS(on)≦13mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-252 Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD61 60SG 61A, 60V, RDS(O ) 9mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD61N60SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD61N60SG meet the RoHS and Green Product with Function reliability approved. TO-252(D-Pack) FEATURES RDS(on)≦9mΩ @VGS=10V RDS(on)≦13mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-252 Package MARKING 61N60SG Date Code PACKAGE INFORMATION Package MPQ TO-252 2.