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SSD75N06J - N-Channel MOSFET

General Description

to provide excellent RDS(on) with low gate charge.

in a wide variety of applications.

Key Features

  • Good stability and uniformity with high EAS High-density cell design for ultra low RDS(ON) Special processing technology for high ESD capability Fully characterized avalanche voltage and current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD75N06J 75A, 60V, RDS(ON) 11.5mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD75N06J uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. FEATURES Good stability and uniformity with high EAS High-density cell design for ultra low RDS(ON) Special processing technology for high ESD capability Fully characterized avalanche voltage and current APPLICATION Power switching application Hard switched and high frequency circuits Uninterruptible power supply MARKING CJU75N06 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch TO-252(D-Pack) A BC D GE K HF MJ N O P REF.