SSD01L60 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente.

Datasheet Details

Part number	SSD01L60
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	671.21 KB
Description	N-Channel Enhancement Mode Power MosFET
Datasheet	SSD01L60-SeCoS.pdf

The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.

RoHs Compliant.
Simple Drive Requirement.
Fast Switching Speed.
Repetitive Avalanche Rated SSD01L60 1A, 600V,RDS(ON)12 N-Channel Enhancement Mode Power Mos. FET TO-252 D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Operating Juncti.

Part Number	Description
SSD02N60J-C	N-Ch Enhancement Mode Power MOSFET
SSD02N60SL	N-Channel MOSFET
SSD04N60J	N-Channel MOSFET
SSD06N70SL	N-Channel MOSFET
SSD09N65H-C	N-Channel Super Junction Power MOSFET
SSD10N10J-C	N-Ch Enhancement Mode Power MOSFET
SSD125N03S-C	N-Channel Fast Switching MOSFET
SSD12P10	P-Channel Enhancement Mode Power MosFET
SSD12P10-C	P-Ch Enhancement Mode Power MOSFET
SSD13P06-C	P-Channel Enhancement Mode Power MOSFET