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SSD80N03J Datasheet Preview

SSD80N03J Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SSD80N03J
80A, 30V, RDS(ON) 6.5m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
SSD80N03J is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent RDS(ON) and gate charge for most of the
synchronous buck converter applications.
TO-252(D-Pack)
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
MARKING
CJU80N03
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
B
C
D
GE
K
HF
N
O
P
M
J
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.80 J 2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.7
E 6.8 7.6 O 0 0.15
F
2.9 REF.
P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Energy 1
EAS
Total Power Dissipation
PD
Maximum Thermal Resistance Junction-Ambient
RθJA
Lead Temperature for Soldering Purposes(1/8’’ from case
for 10s)
TL
Operating Junction and Storage Temperature Range
Notes:
1. EAS condition: VDD=20V,L=0.5mH, RG=25, Starting TJ = 25°C
TJ, TSTG
3
Source
Rating
30
±20
80
320
306
1.25
100
260
150, -55~150
Unit
V
V
A
A
mJ
W
°C / W
°C
°C
http://www.SeCoSGmbH.com/
22-Aug-2018 Rev. C
Any changes of specification will not be informed individually.




SeCoS

SSD80N03J Datasheet Preview

SSD80N03J Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSD80N03J
80A, 30V, RDS(ON) 6.5m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
30
-
-
Drain-Source Leakage Current
IDSS
-
-
1
Gate-Source Leakage Current
IGSS
-
-
On Characteristics 1
±100
Gate-Threshold Voltage
VGS(th)
1.0
-
3
Static Drain-Source On-Resistance 2
-
-
6.5
RDS(ON)
-
-
10
Forward Transconductance
gfs
20
-
-
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Qg
-
51
-
Qgs
-
14
-
Gate-Drain (“Miller”) Change
Qgd
-
11
-
Turn-on Delay Time
Td(on)
-
20
-
Rise Time
Tr
-
15
-
Turn-off Delay Time
Td(off)
-
60
-
Fall Time
Tf
-
10
-
Switching Characteristics
Input Capacitance
Ciss
-
2330
-
Output Capacitance
Coss
-
460
-
Reverse Transfer Capacitance
Diode Forward Voltage 1
Crss
-
230
-
Source-Drain Diode Characteristics
VSD
-
-
1.2
Continuous Source Current
IS
-
-
80
Pulsed Source Current
ISM
Notes:
1. Pulse Test : Pulse width300µs, duty cycle 2%.
-
-
320
Unit
Test Condition
V VGS=0, ID=250µA
µA VDS=30V, VGS=0
nA VGS= ±20V
V VDS=VGS, ID=250µA
VGS=10V, ID=30A
m
VGS=5V, ID=24A
S VDS=5V, ID=24A
ID=30A
nC VDS=10V
VGS=10V
VDD=15V
nS ID=30A
VGS=10V
RG=2.7
VGS =0
pF VDS=15V
f =1.0MHz
V IS=24A, VGS=0
A
A
http://www.SeCoSGmbH.com/
22-Aug-2018 Rev. C
Any changes of specification will not be informed individually.



Part Number SSD80N03J
Description N-Channel MOSFET
Maker SeCoS
Total Page 2 Pages
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