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SSD80N03J - N-Channel MOSFET

General Description

SSD80N03J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD80N03J 80A, 30V, RDS(ON) 6.5mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD80N03J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed MARKING CJU80N03 PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.7 E 6.8 7.