Datasheet4U Logo Datasheet4U.com

SSD9575 - P-Channel MOSFET

📥 Download Datasheet

General Description

The SSD9575 provide the designer with the best combination of fast switching, ruggerized device device design, low on-resistance and cost -effectiveness.

The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

TO-252

Overview

Elektronische Bauelemente SSD9575 -15A, -60V,RDS(ON)90m P-Channel Enhancement Mode Power Mos.

Key Features

  • Low On-Resistance.
  • Simple Drive Requirement.
  • Fast Switching D G Absolute Maximum Ratings S Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max.

More Datasheets from SeCoS Halbleitertechnologie GmbH

Part Number Description
SSD95N03 N-Channel MOSFET
SSD9435 P-Channel MOSFET
SSD9435-C P-Channel Enhancement Mode Power MosFET
SSD9971 N-Ch Enhancement Mode Power MOSFET
SSD9973 N-Ch Enhancement Mode Power MOSFET
SSD01L60 N-Channel Enhancement Mode Power MosFET
SSD02N60J-C N-Ch Enhancement Mode Power MOSFET
SSD02N60SL N-Channel MOSFET
SSD04N60J N-Channel MOSFET
SSD06N70SL N-Channel MOSFET