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SSD9973 - N-Ch Enhancement Mode Power MOSFET

Description

The SSD9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Low Gate Charge.
  • Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.

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Datasheet Details

Part number SSD9973
Manufacturer SeCoS
File Size 570.74 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSD9973 Datasheet

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Elektronische Bauelemente SSD9973 14A, 60V,RDS(ON)80m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSD9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. TO-252 Features * Low Gate Charge * Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF.
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