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SeCoS

SSF3139KW Datasheet Preview

SSF3139KW Datasheet

P-Channel MOSFET

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Elektronische Bauelemente
SSF3139KW
-0.66A, -20V, RDS(O ) 520mΩ
P-Channel Small Signal MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High-Side Switching
Low On-Resistance
Low Threshold
Fast Switching Speed
MARKING
39K
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
Leader Size
7 inch
ORDER INFORMATION
Part Number
Type
SSF3139KW
Lead (Pb)-free
SSF3139KW-C Lead (Pb)-free and Halogen-free
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
0.8TYP
0.650 TYP.
Top
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current 1
IDM
Power Dissipation 2
PD
Operating Junction and Storage Temperature
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient
RθJA
Rating
-20
±12
-0.66
-2.64
200
150, -55~150
625
Unit
V
V
A
A
mW
°C
°C / W
http://www.SeCoSGmbH.com/
30-Oct-2019 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SSF3139KW Datasheet Preview

SSF3139KW Datasheet

P-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSF3139KW
-0.66A, -20V, RDS(O ) 520mΩ
P-Channel Small Signal MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
Gate-Threshold Voltage 3
VGS(th)
-0.35
-
-1.1
Gate-Source Leakage Current
IGSS
-
-
±20
Drain-Source Leakage Current
IDSS
-
-
Static Drain-Source On-Resistance 3
RDS(ON)
-
-
-1
430
520
624
700
-
950
-
Forward Transconductance
Turn-on Delay Time
gfs
0.8
-
-
Td(on)
-
9
-
Rise Time
Turn-off Delay Time
Fall Time
Tr
Td(off)
Tf
-
5.8
-
-
32.7
-
-
20.3
-
Input Capacitance
Output Capacitance
Ciss
Coss
-
170
-
-
25
-
Reverse Transfer Capacitance
Crss
-
15
-
Drain-Source Diode
Diode Forward Voltage 3
VSD
-
-
1.2
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at TA=25°C.
3. Pulse Test: Pulse width300µs, duty cycle0.5%.
Unit
V
V
µA
µA
mΩ
S
Test Condition
VGS=0V, ID= -250µA
VDS=VGS, ID= -250µA
VDS=0V, VGS=±10V
VDS= -20V, VGS=0V
VGS= -4.5V, ID= -1A
VGS= -2.5V, ID= -0.8A
VGS= -1.8V, ID= -0.5A
VDS= -10V, ID= -0.54A
VDD= -10V
nS
VGS= -4.5V
ID= -0.2A
RG=10Ω
VDS= -16V
pF VGS=0V
f=1MHz
V IS= -0.5A, VGS=0V
http://www.SeCoSGmbH.com/
30-Oct-2019 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3



Part Number SSF3139KW
Description P-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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