SSG08N10-C
SSG08N10-C is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSG08N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The SSG08N10-C meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
PACKAGE INFORMATION
Package
SOP-8
2.5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSG08N10-C Lead (Pb)-free and Halogen-free
SOP-8
LD M
JK FE
REF.
A B C D E F G
Millimeter
Min. Max.
5.79 6.20
4.70 5.11
3.80 4.00
0°
8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter Min. Max.
0.33 0.51 0.375 REF.
45°REF. 1.3 1.752 0 0.25 0.25 REF.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol...
