SSG10N10 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 10N10SC Date Code PACKAGE INFORMATION Package SOP-8 3K Leader Size 13 inch SOP-8 LD M JK FE REF. A B C D E F G Millimeter Min....