SSG10N10 Description
The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
SSG10N10 is N-Channel Enhancement Mode Power MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
| Part Number | Description |
|---|---|
| SSG12N03 | N-Channel MOSFET |
| SSG13N10S-C | N-Channel Fast Switching MOSFET |
| SSG13P03 | P-Ch Enhancement Mode Power MOSFET |
| SSG13P03-C | P-Channel MOSFET |
| SSG16P03-C | P-Channel Enhancement Mode Power MOSFET |
The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.