| Title | |
| Description | The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 10N10SC Date Code PACKAGE INFORMATION... |
| Features |
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
MARKING
10N10SC
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size 13 inch
SOP-8
B
LD M
A
H
G
C N
JK FE
REF.
A B C D E F G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
...
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| Datasheet |
 SSG10N10 Datasheet - 1.08MB |
| Distributor |
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| Stock | In stock |
| Price | |
| BuyNow |
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| Distributor | Stock | Price | BuyNow |
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