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SSG10N10 SeCoS N-Channel Enhancement Mode Power MosFET

SeCoS
Description The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 10N10SC Date Code PACKAGE INFORMATION...
Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 10N10SC Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 ...

Datasheet PDF File SSG10N10 Datasheet 1.08MB

SSG10N10   SSG10N10   SSG10N10  




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