SSG3215B-C
SSG3215B-C is Dual-N Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSG3215B-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSG3215B-C meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available
MARKING
3215B
= Date Code
PACKAGE INFORMATION
Package
SOP-8
2.5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSG3215B-C Lead (Pb)-free and Halogen-free
SOP-8
LD M
JK FE
REF.
A B C D E F G
Millimeter
Min. Max.
5.79 6.20
4.70 5.11
3.80 4.00
0°
8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter Min. Max.
0.33 0.51 0.375 REF.
45°REF. 1.3 1.752 0 0.25 0.25...
