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SSG4226 Datasheet Preview

SSG4226 Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SSG4226
N-Ch Enhancement Mode Power MOSFET
8.2 A, 30 V, RDS(ON) 18 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS & FEATURES
z The SSG4226 provides the designer with the
best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
z Simple Drive Requirement
z Lower On-resistance
z Dual N MOSFET Package
PACKAGE INFORMATION
Weight: 0.07936g
MARKING CODE
D1 D1 D2 D2
4226SS
1
S1 G1 S2 G2
= Date Code
2
Gate1
Drain1
78
4
Gate2
1
Source1
Drain2
56
3
Source2
SOP-8
B
LD
M
A
H
G
C
N
JK
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Operating Junction and Storage Temperature Range
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
TJ, TSTG
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient3 Max
Symbol
RθJ-AMB
Ratings
30
±20
8.2
6.7
30
2
-55 ~ +150
0.016
Value
62.5
Unit
V
V
A
A
A
W
W/
Unit
/W
01-April-2009 Rev. B
Page 1 of 4




SeCoS

SSG4226 Datasheet Preview

SSG4226 Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSG4226
N-Ch Enhancement Mode Power MOSFET
8.2 A, 30 V, RDS(ON) 18 mΩ
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Trans-conductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25)
Drain-Source Leakage Current(Tj=70)
Static Drain-Source On-Resistance2
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS 30
ΔBVDSS
/ΔTJ
-
VGS(th) 1.0
gfs
-
IGSS
-
-
IDSS
-
-
RDS(ON)
-
Qg
-
Qgs
-
Qgd
-
Td(on)
-
Tr
-
Td(off)
-
Tf
-
Ciss
-
Coss
-
Crss
-
-
0.03
-
15
-
-
-
-
-
20
5
12
12
8
31
12
1450
320
230
-
V VGS = 0, ID = 250 μA
-
V / °C Reference to 25°C, ID = 1 mA
3.0
-
±100
1
25
18
40
30
-
-
-
-
-
-
2320
-
-
V VDS = VGS, ID = 250 μA
S VDS = 10 V, ID = 6 A
nA VGS = ±20 V
uA VDS = 30 V, VGS = 0
uA VDS = 24 V, VGS = 0
mVGS = 10 V, ID = 6.0 A
VGS = 4.5 V, ID = 4.0 A
ID = 8 A
nC VDS = 24 V
VGS = 4.5 V
VDD = 15 V
ID = 1 A
ns VGS = 10 V
RG = 3.3
RD = 15
VGS = 0 V
pF VDS = 25 V
f = 1.0 MHz
SOURCE-DRAIN DIODE
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD
-
-
1.2
V IS= 1.7A, VGS=0V, TJ=25°C
Reverse Recovery Time
Reverse Recovery Charge
Trr
-
27
-
nS IS = 8A, VGS = 0V,
Qrr
-
18
-
nC dl/dt= 100 A/μs
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width300μs, duty cycle2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135°C/W when mounted on Min. copper pad.
01-April-2009 Rev. B
Page 2 of 4



Part Number SSG4226
Description N-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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SSG4226 Datasheet PDF





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