SSG4472N Overview
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SSG4472N Details
| Part number | SSG4472N |
|---|---|
| Datasheet | SSG4472N-SeCoS.pdf |
| File Size | 476.25 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | N-Channel Enhancement Mode Power MosFET |
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