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SSG4953P Datasheet Preview

SSG4953P Datasheet

Dual P-Ch Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SSG4953P
-5.2 A, -30 V, RDS(ON) 52 m
Dual P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize high cell density process. Low RDS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical applications
are PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature SOP-8 surface mount package saves
board space.
High power and current handling capability..
Extended VGS range (±25) for battery pack applications.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
www.DataSheet.net/
SOP-8
B
LD
M
A
HG
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
SD
GD
SD
GD
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA = 25°C
TA = 70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA = 25°C
TA = 70°C
Operating Junction & Storage Temperature Range
Symbol
VDS
VGS
ID @
IDM
IS
PD @
TJ, TSTG
Thermal Resistance Ratings
Junction to Case (Max.) 1
Junction to Ambient (Max.) 1
t5 sec
t10 sec
RθJC
RθJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
-30
±25
-5.2
-4.2
-30
-1.6
2.1
1.3
-55 ~ 150
40
60
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
15-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
Datasheet pdf - http://www.DataSheet4U.co.kr/




SeCoS

SSG4953P Datasheet Preview

SSG4953P Datasheet

Dual P-Ch Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SSG4953P
-5.2 A, -30 V, RDS(ON) 52 m
Dual P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
-1 -
--
--
--
-30 -
--
--
- 19
- -0.7
Dynamic 2
-
±100
-1
-5
-
52
89
-
-
V VDS= VGS, ID= -250μA
nA VDS= 0V, VGS= ±25V
μA VDS= -24V, VGS= 0V
μA VDS= -24V, VGS= 0V, TJ=55°C
A VDS= -5V, VGS= -10V
VGS= -10V, ID= -5.2A
m
VGS= -4.5V, ID= -4.0A
S VDS= -15V, ID= -5.2A
V IS= -2.1A, VGS= 0V
Total Gate Charge
Qg -
Gate-Source Charge
Qgs -
Gate-Drain Charge
Qgd -
Turn-On Delay Time
Td(on)
-
Rise Time
Tr -
Turn-Off Delay Time
Td(off)
-
Fall Time
Tf -
Notes:
1. Pulse testPW 300μs duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
15
2.2
1.7
10www.DataSheet.net/
2.8
53.6
46
-
-
-
-
-
-
-
ID= -5.2A
nC VDS= -15V
VGS= -10V
VDD= -15V
nS
ID= -1A
VGEN= -10V
RL= 15, RG= 6
http://www.SeCoSGmbH.com/
15-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number SSG4953P
Description Dual P-Ch Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 4 Pages
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