SSG4953 Description
The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a mon drain arrangement to from a bidirectional blocking switch.
SSG4953 Key Features
- Simple Drive Requirement
- Lower On-resistance
- Low Gate Charge
- 30 ±20 -6 -4 -12 108 19 1.5 -55 ~ 150
- 6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET
- S VDS= -10V, ID= -6A
- 1 μA VDS= -24V,VGS=0
- 3.1 -9
- ID= -6A nC VDS= -20V
- VGS=0V