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SSG4992-C - Dual-N Enhancement Mode Power MOSFET

General Description

The SSG4992-C is the high cell density trenched dual N-ch MOSFETs, which provides excellent RDS(ON) and efficiency for most of the small power switching and load switch applications.

The SSG4992-C meets the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Super Low Gate Charge Green Device Available Excellent Cdv/dt Effect Decline Advanced High Cell Density Trench Technology.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSG4992-C 4.5A, 100V, RDS(O ) 70mΩ Dual- Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4992-C is the high cell density trenched dual N-ch MOSFETs, which provides excellent RDS(ON) and efficiency for most of the small power switching and load switch applications. The SSG4992-C meets the RoHS and Green Product requirement with full function reliability approved. FEATURES Super Low Gate Charge Green Device Available Excellent Cdv/dt Effect Decline Advanced High Cell Density Trench Technology MARKING 4992 = Date Code PACKAGE INFORMATION Package MPQ SOP-8 2.