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SSG8603-C - N & P-Ch Enhancement Mode Power MOSFET

Description

The SSG8603-C is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet Details

Part number SSG8603-C
Manufacturer SeCoS
File Size 955.71 KB
Description N & P-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSG8603-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SSG8603-C N-Ch: 10.4A, 30V, RDS(ON) 12m P-Ch: -7.8A, -30V, RDS(ON) 20m N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG8603-C is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG8603-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING 8603  = Date Code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF.
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