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SSI2007 Datasheet Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

General Description

S The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

Overview

Elektronische Bauelemente SSI2007 N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.