The SSI2007 is a N- and P-Channel 20V MOSFET.
| Part Number | SSI2007 Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
SSI2007-VB
SSI2007-VB Datasheet N-and P-Channel 20V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
VDS (V) 20
RDS(on) (Ω) 0.270 at VGS = 4.5 V 0.410 at VGS = 2.5 V
P-Channel
- 20
0.660.
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC SC-75-6 D1 S2 G2 G1 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channe. |
| Part Number | SSI2007 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Overview |
The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use i.
fied)
Part Number
Parameter
Symbol
N-Channel
P-Channel
Unit
10S Steady State 10S Steady State
Drain * Source Voltage VDS 20 -20 V Gate * Source Voltage VGS ±6 V Continuous Drain Current 1 TA= 25°C TA= 70°C 0.88 0.8 -0.64 -0.56 ID A 0.71 0.64 -0.51 -0.45 Power Dissipation 1 T. |