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SSI2007 - Power MOSFET

Datasheet Summary

Description

The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

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Datasheet preview – SSI2007

Datasheet Details

Part number SSI2007
Manufacturer SeCoS
File Size 1.09 MB
Description Power MOSFET
Datasheet download datasheet SSI2007 Datasheet
Additional preview pages of the SSI2007 datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSI2007 N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch DEVICE MARKING: 07* Date Code PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7’ inch SOT-563 A B J D CF GH E REF.
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