The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load switch and level shift.
| Part number | SSI2007 |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 1.09 MB |
| Description | Power MOSFET |
| Datasheet |
 SSI2007 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| SSI2007 | N- and P-Channel 20V MOSFET | VBsemi |
| SSI204 | LOW POWER DTMF RECEIVER | Silicon Systems |
| SSI2154 | 800mA 20V Dual N-Channel MOSFET | SeCoS Halbleitertechnologie |
| SSI263A | Phoneme Speech synthesizer | Silicon Systems |
| SSI2N60B | N-Channel MOSFET | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| SSI2085E-C | N & P-Ch Enhancement Mode Power MOSFET |
| SSI20N5E-C | Dual N-Ch Enhancement Mode Power MOSFET |
| SSI3139J-C | Dual P-Ch Enhancement Mode Power MOSFET |
| SSI318-C | Dual N-Channel MOSFET |
| SSI3439J | N & P-Ch Enhancement Mode Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
