Datasheet Summary
Elektronische Bauelemente
N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET
RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift.
MECHANICAL DATA
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit Load Switch
DEVICE MARKING: 07- Date Code
PACKAGE...
