SSI2007 Description
Elektronische Bauelemente SSI2007 N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor.