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SSL40N03 - N-Channel Enhancement Mode Power MosFET

Description

The SSL40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Fast Switching.
  • Simple Drive Requirement.
  • Dynamic dv/dt Rating.
  • Repetitive Avalanche Rated D REF. A b L4 c L3 L1 E G Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 o o 0 8 1.27 REF. S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. net Symbol VDS VGS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o.

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Datasheet preview – SSL40N03

Datasheet Details

Part number SSL40N03
Manufacturer SeCoS
File Size 651.85 KB
Description N-Channel Enhancement Mode Power MosFET
Datasheet download datasheet SSL40N03 Datasheet
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Full PDF Text Transcription

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SSL40N03 Elektronische Bauelemente 40A, 30V,RDS(ON)17 m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSL40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. Features * Fast Switching * Simple Drive Requirement * Dynamic dv/dt Rating * Repetitive Avalanche Rated D REF. A b L4 c L3 L1 E G Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.
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