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SSL6679 Datasheet P-channel Enhancement Mode Power Mos.fet

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SSL6679 Elektronische Bauelemente -75A, -30V,RDS(ON) 9m£[ P-Channel Enhancement Mode Power Mos.

General Description

The SSL6679 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-263 is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit.

Key Features

  • Lower On-Resistance.
  • Simple Drive Requirement.
  • Fast Switching Characteristics D REF. A b L4 c L3 L1 E G S Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 o o 0 8 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol.

More Datasheets from SeCoS Halbleitertechnologie GmbH

Part Number Description
SSL40N03 N-Channel Enhancement Mode Power MosFET
SSL4407 P-Channel Enhancement Mode Power MosFET

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