900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SeCoS

SSM1N25E-C Datasheet Preview

SSM1N25E-C Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSM1N25E-C
1A, 250V, RDS(ON) 1.78
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
FEATURES
Low Gate Charge
Simple Drive Requirement
Green Device Available
ESD Susceptibility 2KV
MARKING
1N25E
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSM1N25E-C Lead (Pb)-free and Halogen-free
SOT-223
A
M
4
Top View C B
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@ VGS=10V 1
TA=25°C
ID
TA=70°C
Pulsed Drain Current 2
IDM
Total Power Dissipation 3
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
t10sec
Thermal Resistance from Junction to Ambient 1
RθJA
Steady State
Ratings
250
±20
1
0.8
4
2.8
-55~150
45
62.5
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
27-Oct-2017 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SSM1N25E-C Datasheet Preview

SSM1N25E-C Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSM1N25E-C
1A, 250V, RDS(ON) 1.78
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
250
-
BVDSS/TJ
-
0.3
-
V VGS=0, ID=250µA
-
V/°C Reference to 25°C, I D=1mA
Gate-Threshold Voltage
VGS(th)
1.5
-
3.5
V VDS=VGS, ID=250µA
Forward Transconductance
gfs
-
1.8
-
S VDS=15V, ID=1A
Gate-Source Leakage Current
IGSS
-
-
±10
µA VGS= ±20V
Drain-Source Leakage
Current
TJ=25°C
TJ=85°C
Static Drain-Source On-Resistance 2
Total Gate Charge 2
Gate-Source Charge
Gate-Drain (‘’Miller’’)Charge
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
-
1
µA VDS=200V, VGS=0
-
-
25
-
-
1.78
VGS=10V, ID=1A
-
4.47
-
VDS=200V
-
1
-
nC VGS=10V
-
1.45
-
ID=1A
-
11.8
-
VDD=125V
-
-
10.7
12.9
-
-
nS
VGS=10V
RG=6
-
6.9
-
ID=1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage 2
Ciss
-
214
-
Coss
-
16.2
-
Crss
-
8
-
Source-Drain Diode
VSD
-
0.8
1.2
VDS=25V
pF VGS=0
f=1MHz
V IS=1A, VGS=0, TJ=25°C
Reverse Recovery Time
Reverse Recovery Charge
Trr
-
78
-
nS
IF=1A, dI/dt=100A/µs, TJ=25°C
Qrr
-
325
-
nC
Notes:
1. Surface mounted on a FR-4 board with a 1 inch2 copper pad. RθJA is 120°C/W when the device is mounted on the minim um copper pad.
2. The data tested by pulsed, pulse width300µs, duty cycle2%.
3. The power dissipation is limited by 150°C junct ion temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
27-Oct-2017 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4



Part Number SSM1N25E-C
Description N-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
PDF Download

SSM1N25E-C Datasheet PDF





Similar Datasheet

1 SSM1N25E-C N-Channel MOSFET
SeCoS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy