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SSM9971 - N-Channel Enhancement Mode Power MosFET

General Description

The SSM9971 provide the designer with the best combination of fast switching,low on-resistance, cost-effectiveness and ruggedized device design.

Key Features

  • Simple Drive Requirement.
  • Low On-Resistance REF. D Date Code 9 9 7 1 G A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 G D S Millimeter Min. Max. 13°TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @10V Continuous Drain Current, VGS @10V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSM9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSM9971 provide the designer with the best combination of fast switching,low on-resistance, cost-effectiveness and ruggedized device design. SOT-223 Features * Simple Drive Requirement * Low On-Resistance REF. D Date Code 9 9 7 1 G A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 G D S Millimeter Min. Max. 13°TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.