900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SeCoS

SSN318NE-C Datasheet Preview

SSN318NE-C Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSN318NE-C
0.25A , 60V, RDS(ON) 1.6
N-Channel Enhancement MOSFET
FEATURES
60V/250mA
RDS(ON)1.6@VGS=10V
RDS(ON)2@VGS=4.5V
RDS(ON)4.5@VGS=2.5V
Reliable and Rugged
Green Device Available
ESD Protection
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-723
1 GATE
2 SOURCE
3 DRAIN
MARKING
318
PACKAGE INFORMATION
Package
MPQ
SOT-723
8K
Leader Size
7 inch
ORDER INFORMATION
Part Number
Type
SSN318NE-C
Lead (Pb)-free and Halogen-free
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.150 1.250
0.750 0.850
- 0.500
1.150 1.250
0.800TYP.
REF.
F
G
H
I
Millimeter
Min. Max.
0.170 0.270
0.270 0.370
0 0.050
- 0.150
Top View
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V 1
Pulsed Drain Current 2
TA=25°C
TA=85°C
ID
IDM
Total Power Dissipation
TA=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient 1
RθJA
Ratings
60
±20
0.25
0.18
1
150
-55~150
833
Unit
V
V
A
A
mW
°C
°C / W
http://www.SeCoSGmbH.com/
19-Mar-2020 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SSN318NE-C Datasheet Preview

SSN318NE-C Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSN318NE-C
0.25A , 60V, RDS(ON) 1.6
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
60
-
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.5
Gate-Body Leakage Current
IGSS
-
- ±10
Zero Gate Voltage Drain Current
IDSS
-
-
-1
- 10
- - 1.6
Drain-Source On-Resistance 3
RDS(ON)
-
-
2
- - 4.5
Total Gate Charge
Qg - 0.76 -
Gate-Source Charge
Qgs - 0.085 -
Gate-Drain (“Miller”) Change
Qgd - 0.26 -
Turn-On Delay Time
Td(on)
-
4
-
Rise Time
Tr - 7 -
Turn-Off Delay Time
Td(off)
-
15
-
Fall Time
Tf - 15 -
Input Capacitance
Ciss - 43 -
Output Capacitance
Coss
-
7.2
-
Reverse Transfer Capacitance
Crss
-
4
-
Source-Drain Diode
Diode Forward Voltage 3
VSD -
- 1.2
Notes:
1. Surface mounted on FR4 Board using the minimum recommended pad size
2. Pulse width limited by maximum junction temperature., Pw 300µs, Duty cycle 2%
3. The data tested by pulsed , pulse width 300us , duty cycle 2%
Unit
V
V
µA
µA
Test Conditions
VGS=0, ID=250µA
VDS=10V, ID=1mA
VDS=0, VGS=±20V
VDS=48V, VGS=0,TJ=25°C
VDS=48V, VGS=0,TJ=70°C
VGS=10V, ID=220mA
VGS=4.5V, ID=220mA
VGS=2.5V, ID=120mA
IDS=250mA,
nC VDS=30V,
VGS=4.5V
VDD=30V,
nS IDS=100mA,
VGS=4.5V,
RGEN=10
VGS=0V,
pF VDS=10V,
f=1MHz
V IS=200mA, VGS=0V
http://www.SeCoSGmbH.com/
19-Mar-2020 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SSN318NE-C
Description N-Channel MOSFET
Maker SeCoS
Total Page 4 Pages
PDF Download

SSN318NE-C Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SSN318NE-C N-Channel MOSFET
SeCoS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy