SSPF7490N Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATION Industrial D/C/DC conversion circuits White LED boost converters Automotive systems PACKAGE INFORMATION Package DFN5x6-8PP 3K Leader Size 13 inch DFN5x6-8PP θ e E A db g REF. A B C D E F G Millimeter Min. Max. 0.85 1 5.2 BSC 0.15 0.25 3.81 BSC 6.05 BSC 0.25 BSC 3.81 BSC REF. θ b d e g Millimeter Min. Max. 0° 10° 0.3 0.5 1.27 BSC 5.55 BSC 1.2 TYP. MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 IDM IS Power Dissipation...