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SSPRDJ4504-C Datasheet Preview

SSPRDJ4504-C Datasheet

Dual-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSPRDJ4504-C
N-Ch: 8.2A, 40V, RDS(ON) 30m
P-Ch: -6.4A, -40V, RDS(ON) 40m
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSPRDJ4504-C is the highest performance trench
N-Ch and P-Ch MOSFETs with extreme high cell density,
which provide excellent RDS(ON) and gate charge for most
of the synchronous buck converter applications.
The SSPRDJ4504-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology
Super Low Gate Charge
Green Device Available
MARKING
J4504
=Date Code
PACKAGE INFORMATION
Package
MPQ
DFN3x3-8DJ
5K
Leader Size
13 inch
DFN3x3-8DJ
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
2.9
3.1
3.15 3.45
2.9
3.1
0.15 BSC
0.935 1.135
1.535 1.935
0.28 0.48
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.55 0.75
0.3
0.5
0.315 0.515
0.2
0.4
0.152 REF.
0.65 0.85
ORDER INFORMATION
Part Number
Type
SSPRDJ4504-C Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
TC=100°C
Continuous Drain Current, @VGS=10V 1
TA=25°C
Pulsed Drain Current 3
TA=70°C
Total Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 2
Thermal Resistance Junction-Case 1
http://www.SeCoSGmbH.com/
07-May-2020 Rev. A
VDS
VGS
ID
IDM
PD
TJ, TSTG
Thermal Data
RθJA
RθJC
Ratings
N-Ch
P-Ch
40
-40
±20
8.2
-6.4
5.4
-4.2
5.2
-4
4.4
-3.4
17
-13
3.78
-55~150
Unit
V
V
A
A
W
°C
84
135
°C/W
33
Any changes of specification will not be informed individually.
Page 1 of 7




SeCoS

SSPRDJ4504-C Datasheet Preview

SSPRDJ4504-C Datasheet

Dual-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSPRDJ4504-C
N-Ch: 8.2A, 40V, RDS(ON) 30m
P-Ch: -6.4A, -40V, RDS(ON) 40m
N & P-Ch Enhancement Mode Power MOSFET
N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
40
-
-
V VGS=0, ID=250µA
VGS(th)
1
-
2.5
V VDS=VGS, ID=250µA
Forward Transfer Conductance
gfs
-
14
-
S VDS=5V, ID=6A
Gate-Source Leakage Current
IGSS
-
-
±100
nA VGS= ±20V
TJ=25°C
-
-
1
Drain-Source Leakage Current
IDSS
µA VDS=32V, VGS=0
TJ=55°C
-
-
5
Static Drain-Source On-Resistance 4
-
RDS(ON)
-
-
30
VGS=10V, ID=6A
m
-
40
VGS=4.5V, ID=4A
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg
-
5.5
-
ID=6A
Qgs
-
1.25
-
nC VDS=20V
Qgd
-
2.5
-
VGS=4.5V
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
8.9
-
VDD=20V
Tr
-
2.2
-
VGS=10V
nS ID=1A
Td(off)
-
41
-
RG=3.3
Tf
-
2.7
-
RD=20
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
593
-
VGS=0
Coss
-
76
-
pF VDS=15V
Crss
-
56
-
f=1.0MHz
Source-Drain Diode
Continuous Source Current 1
Pulsed Source Current 3
Forward on Voltage 4
IS
-
ISM
-
VSD
-
-
8.2
A
-
17
-
1.2
V VGS=0, IS=1A, TJ=25°C
http://www.SeCoSGmbH.com/
07-May-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 7



Part Number SSPRDJ4504-C
Description Dual-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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