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SSPS7338N Datasheet Preview

SSPS7338N Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SSPS7338
19A, 30V, RDS(O ) 6.9 m
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low RDS(on) trench technology
Low thermal impedance
Fast switching speed
APPLICATION
Industrial D/C/DC conversion circuits
White LED boost converters
Automotive systems
PACKAGE INFORMATION
Package
MPQ
DFN3x3-8PP
3K
Leader Size
13 inch
DFN3x3-8PP
B
D
C
θ
eE
A
db
g
F
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.70 0.90
3.00BSC
0.10 0.25
1.80 2.3
3.2BSC
0.01 0.02
2.35BSC
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 12°
0.20 0.40
0.65BSC
3.00BSC
0.70(TYP.)
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance from
Junction to Ambient 1
t10 sec
Steady State
RθJA
Notes:
1.
2.
The surface of the device is mounted on a 1” x 1” FR4 board.
The pulse width is limited by the maximum junction temperature.
Rating
30
±20
19
16
80
5.1
3.5
2
-55~150
35
81
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
25-Apr-2016 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SSPS7338N Datasheet Preview

SSPS7338N Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSPS7338
19A, 30V, RDS(O ) 6.9 m
-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Static 1
Gate-Source Threshold Voltage
VGS(th)
1
-
-
Gate-Body Leakage Current
IGSS
-
- ±100
Zero Gate Voltage Drain Current
IDSS
-
-
-1
- 25
On-State Drain Current
ID(on)
40
-
-
Drain-Source On-Resistance
RDS(ON)
-
-
- 6.9
- 9.8
Forward Transconductance gfs - 30 -
Diode Forward Voltage
VSD
-
0.72
-
Dynamic 1
Total Gate Charge
Gate-Source Charge
Qg - 20 -
Qgs - 7.1 -
Gate-Drain Charge
Qgd - 9.2 -
Input Capacitance
Ciss - 1835 -
Output Capacitance
Coss - 315 -
Reverse Transfer Capacitance
Crss
-
303
-
Turn-On Delay Time
Td(on)
-
4
-
Rise Time
Tr - 66 -
Turn-Off Delay Time
Td(off)
-
53
-
Fall Time
Tf - 30 -
Notes:
1. Pulse testPW300µs, duty cycle2%.
Unit Test Condition
V VDS=VGS, ID=250µA
nA VDS=0V, VGS= ±20V
VDS=24V, VGS=0
µA
VDS=24V, VGS=0, TJ=55°C
A VDS=5V, VGS=10V
VGS=10V, ID=17.6A
mΩ
VGS=4.5V, ID=12.4A
S VDS=15V, ID=17.6A
V IS=2.6A, VGS=0
VDS=15V
nC VGS=4.5V
ID=17.6A
VDS=15V
pF VGS=0
f=1MHz
VDS=15V
VGEN=10V
nS ID=17.6A
RL=0.9Ω
RGEN=6Ω
http://www.SeCoSGmbH.com/
25-Apr-2016 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SSPS7338N
Description N-Channel MOSFET
Maker SeCoS
Total Page 4 Pages
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