SSQ73N10SG Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION The SSQ73N10SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ73N10SG meet the Ro HS and Green Product with Function reliability approved. TO-220 FEATURES RDS(on)≦11mΩ @VGS=10V RDS(on)≦14mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package MARKING 73N10SG Date Code Gate Drain Source ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Silicon Limited) Pulsed Drain Current TC=25°C TC=100°C VGS ID IDM Avalanche Energy, Single Pulse, @L=0.1m H TC=25°C Power Dissipation TC=25°C Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient RθJA Maximum Thermal Resistance Junction-Case RθJC REF. A B C D E F...