SSQ85N80SG
DESCRIPTION
The SSQ85N80SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ85N80SG meet the Ro HS and Green Product with Function reliability approved.
TO-220
FEATURES
RDS(on)≦8mΩ @VGS=10V RDS(on)≦11.1mΩ @VGS=4.5V High speed power switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
TO-220 Package
MARKING
85N80SG
Date Code
Gate
Drain
Source
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (Silicon Limited) Pulsed Drain Current
TC=25°C TC=100°C
VGS ID IDM
Avalanche Energy, Single Pulse, @L=0.1m H TC=25°C
Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance...
