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SSQ85N80SG Datasheet Preview

SSQ85N80SG Datasheet

N-Channel Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SSQ85 80SG
85A, 80V, RDS(O ) 8mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSQ85N80SG is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent RDS(ON) and gate charge for most of the
synchronous buck converter applications.
The SSQ85N80SG meet the RoHS and Green Product with
Function reliability approved.
TO-220
FEATURES
RDS(on)8mΩ @VGS=10V
RDS(on)11.1mΩ @VGS=4.5V
High speed power switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
TO-220 Package
MARKING
85N80SG
Date Code
1
Gate
2
Drain
3
Source
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (Silicon Limited)
Pulsed Drain Current
TC=25°C
TC=100°C
VGS
ID
IDM
Avalanche Energy, Single Pulse, @L=0.1mH TC=25°C
EAS
Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
9.96 10.36
14.7
16
2.74 BSC.
12.7 14.73
1.15 1.82
0.39 1.01
3.56 4.82
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
2.54 BSC.
2.04 2.92
3.745 REF.
0.356 0.5
5.85 6.85
0.51 1.39
Ratings
80
±20
85
60
240
20
125
-55 ~ 175
50
1.2
Unit
V
V
A
A
mJ
W
°C
°C / W
http://www.SeCoSGmbH.com/
07-Aug-2017 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SSQ85N80SG Datasheet Preview

SSQ85N80SG Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SSQ85 80SG
85A, 80V, RDS(O ) 8mΩ
-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
80 -
-
1 1.6 2.4
Forward Transfer conductance
Gate-Source Leakage Current
Drain-Source Leakage Current
TJ=25°C
TJ=100°C
Static Drain-Source On-Resistance
gfs
IGSS
IDSS
RDS(ON)
- 65 -
- - ±100
- -1
- - 100
- 6.3 8
- 8.7 11.1
Total Gate Charge
Qg - 40 -
Total Gate Charge
Gate-Source Charge
Qg - 19 -
Qgs - 4.5 -
Gate-Drain (“Miller”) Change
Qgd - 7.5 -
Turn-on Delay Time
Rise Time
Td(on)
Tr
- 10 -
-6-
Turn-off Delay Time
Fall Time
Td(off)
Tf
- 32 -
-8-
Input Capacitance
Output Capacitance
Ciss
Coss
- 2200 -
- 247 -
Reverse Transfer Capacitance
Crss - 12.5
Source-Drain Diode
-
Forward On Voltage
VSD - 0.9 1.2
Reverse Recovery Time
Trr - 30 -
Reverse Recovery Charge
Qrr - 90 -
Unit
Test conditions
V VGS=0, ID=250µA
V VDS=VGS, ID=250µA
S VDS=5V, ID=20A
nA VGS=±20V
µA VDS=80V, VGS=0
mΩ VGS=10V, ID=20A
mΩ VGS=4.5V, ID=20A
VGS=10V
VGS=4.5V
nC ID=20A
VDD=40V
VGS=10V
VDD=40V
nS ID=20A
VGS=10V
RG=10Ω
VGS=0
pF VDS=40V
f=1.0MHz
V IF=20A, VGS=0
nS
VR=40V, IF=20A, dl/dt=400A/µs
nC
http://www.SeCoSGmbH.com/
07-Aug-2017 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SSQ85N80SG
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 4 Pages
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