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SSQ85N80SG - N-Channel Enhancement Mode Power MOSFET

General Description

The SSQ85N80SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSQ85N80SG meet the RoHS and Green Product with Function reliability approved.

Key Features

  • RDS(on)≦8mΩ @VGS=10V RDS(on)≦11.1mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package.

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Full PDF Text Transcription for SSQ85N80SG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSQ85N80SG. For precise diagrams, and layout, please refer to the original PDF.

Elektronische Bauelemente SSQ85 80SG 85A, 80V, RDS(O ) 8mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION Th...

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mpliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSQ85N80SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ85N80SG meet the RoHS and Green Product with Function reliability approved. TO-220 FEATURES RDS(on)≦8mΩ @VGS=10V RDS(on)≦11.1mΩ @VGS=4.

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