SSQF02N60J Datasheet - SeCoS

N-Channel MOSFET

SSQF02N60J Features

* Robust high voltage termination Specified avalanche energy Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS(ON) are specified at the elevated temperature REF. A B C D E F G Millimeter Min. Max. 14.80

SSQF02N60J General Description

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers .

SSQF02N60J Datasheet (248.32 KB)

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Datasheet Details

Part number:

SSQF02N60J

Manufacturer:

SeCoS

File Size:

248.32 KB

Description:

N-channel mosfet.
Elektronische Bauelemente SSQF02N60J 2A, 600V, RDS(ON) 4.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.

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SSQF02N60J N-Channel MOSFET SeCoS

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SSQF02N60J Features

SSQF02N60J General Description

Datasheet Details

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SSQF02N60J Distributor