Description
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
Features
- Robust high voltage termination Specified avalanche energy Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS(ON) are specified at the elevated temperature
REF. A B C D E F G
Millimeter Min. Max. 14.80 15.20 9.96 10.36
13.20 REF. 4.30 4.70 2.80 3.20 2.50 2.90 0.50 0.75
REF. H J K L M N
2
Drain
Millimeter Min. Max. 3.60 4.00
1.30 REF. 0.50 0.75
2.54 REF. 2.70 REF. φ 3.5 REF. 1
Gate.
SSQF02N60J-SeCoS.pdf
