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SSQF07N65J - N-Ch Enhancement Mode Power MOSFET

General Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

Key Features

  • High Current Rating.
  • Low RDS(ON).
  • Low Capacitance.
  • Low Total Gate Charge.
  • Tighter VSD Specifications.
  • Avalanche Energy Specified.
  • Fast Switching Capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSQF07N65J 7.4A, 650V, RDS(ON) 1.3Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.