SSQF12N65J Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION The SSQF12N65J is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQF12N65J meet the Ro HS and Green Product requirement with full function reliability approved. ITO-220J FEATURES High Current Rating Super Low Gate Charge Lower RDS(ON) Low Reverse Transfer Capacitance Fast Switching Capability MARKING PF12N65 = Production Line Indication ORDER INFORMATION Part Number Type Lead (Pb)-free SSQF12N65J-C Lead (Pb)-free and Halogen-free REF. A B C D E F G Millimeter Min. Max. 14.50 15.50 9.50 10.50 13.20 REF. 4.24 4.84 2.52 3.20 2.50 2.90 0.47 0.75 REF. H J K L M N Millimeter Min. Max. 3.80 TYP. 1.30 REF. 0.30 0.90 2.54 REF. 2.70 REF. φ 3.50 REF. Drain Gate ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Single Pulsed Avalanche Energy 3 Power Dissipation 1 Maximum Lead Temperature for Soldering Purposes @1/8” from case for 5 seconds Operating Junction and Storage Temperature Range VGS ID IDM EAS PD TL TJ, TSTG Thermal Resistance Ratings Thermal Resistance from Junction-Ambient 5 RθJA Thermal Resistance from Junction-Case...