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SSQF50N10SV-C - N-Channel Shielded Gate Trench Power MOSFET

Description

The SSQF50N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Shielded Gate Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet Details

Part number SSQF50N10SV-C
Manufacturer SeCoS
File Size 582.95 KB
Description N-Channel Shielded Gate Trench Power MOSFET
Datasheet download datasheet SSQF50N10SV-C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSQF50N10SV-C 50A, 100V, RDS(ON) 8.4mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSQF50N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQF50N10SV-C meet the RoHS and Green Product requirement with full function reliability approved. ITO-220J FEATURES  Shielded Gate Trench Technology  Super Low Gate Charge  Green Device Available MARKING 50N10SV  =Date Code 1 ORDER INFORMATION Gate Part Number Type SSQF50N10SV-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 14.50 15.50 9.
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