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SST1N20-C - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SST1N20-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SST1N20-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available F C H DG K J.

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Datasheet Details

Part number SST1N20-C
Manufacturer SeCoS
File Size 618.38 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SST1N20-C Datasheet
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Full PDF Text Transcription

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Elektronische Bauelemente SST1N20-C 1A, 200V, RDS(ON) 1.35Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies halogen and lead-free DESCRIPTION The SST1N20-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SST1N20-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-26 A E L B FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available F C H DG K J MARKING 1N20 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SST1N20-C Lead (Pb)-free and Halogen-free REF.
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