900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SeCoS

SST2611B Datasheet Preview

SST2611B Datasheet

P-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SST2611B
-2.4A , -60V , RDS(ON) 175 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST2611B utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The SOT-26
package is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Smaller Outline Package
Surface mount package
MARKING
2611B
Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
SOT-26
D
H
AC
EL
BJ
K
FG
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.20 REF.
1.40 1.80
0.95 REF.
0.60 REF.
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.37 REF.
0.30 0.55
--
0.12 REF.
- 0.10
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ VGS=10V 1
Pulsed Drain Current 2
Power Dissipation 3
TA=25°C
TA=70°C
TA=25°C
ID
IDM
PD
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 1
RθJA
Ratings
-60
±20
-2.4
-1.7
-4.5
1.1
0.009
-55~150
110
Unit
V
V
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
16-Mar-2015 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SST2611B Datasheet Preview

SST2611B Datasheet

P-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SST2611B
-2.4A , -60V , RDS(ON) 175 m
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-60
-
-
V VGS=0, ID= -250uA
Gate-Threshold Voltage
VGS(th)
-1
-
-3
V VDS=VGS, ID= -250uA
Gate-Body Leakage Current
IGSS
-
-
±100
nA VGS=±20V
TJ=25°C
- - -1
Drain-Source Leakage Current
IDSS
µA VDS= -48V, VGS=0
TJ=55°C
- - -5
Drain-Source On-Resistance 2
RDS(ON)
-
-
- 175
VGS= -10V, ID= -2A
m
- 220
VGS= -4.5V, ID= -1A
Forward Transconductance
gfs
- 5.8 -
S VDS= -10V, ID= -2A
Dynamic
Total Gate Charge2
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 4.59 -
- 1.39 -
- 1.62 -
- 17.4 -
- 5.4 -
- 37.2 -
- 2.4 -
VDS= -20V,
nC VGS= -4.5V,
ID= -2A
VDS= -15V,
nS VGS= -10V,
RG=3.3,
ID= -1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 531 -
VGS=0,
Coss - 59 - pF VDS= -15V,
Crss - 38 -
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage 2
VSD - - -1.2 V IS= -1A, VGS=0
Continuous Source Current 1,4
Pulsed Source Current 2,4
IS - - -2.4 A VG= VD=0
ISM - - -4.5 A Force Current
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper, 156/W when mounted on Min. copper pad.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The power dissipation is limited by 150junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
16-Mar-2015 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SST2611B
Description P-Channel MOSFET
Maker SeCoS
Total Page 4 Pages
PDF Download

SST2611B Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SST2611B P-Channel MOSFET
SeCoS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy