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SST3215B Datasheet Preview

SST3215B Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SST3215B
2.2A, 150V, RDS(O ) 320m
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST3215B provides designers with the best combination
of fast switching, low on-resistance and cost-effectiveness.
SOT-26 package is universally used for all commercial-
industrial surface mount applications.
FEATURES
150V/2.2A
RDS(ON)320mΩ@ VGS=10V
RDS(ON)380mΩ@ VGS=4.5V
Reliable and rugged
Green device available
SOT-26
A
E
L
B
F CH
DG K J
MARKING
3215B
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.30 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
DD
DD
GS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS=10V 1
Pulsed Drain Current 2
TC=25°C
TC=75°C
TA=25°C
TA=75°C
VGS
ID
IDM
Power Dissipation
TC =25°C
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance Junction to Ambient 1
t5sec
Steady State
RθJA
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case 1
RθJC
http://www.SeCoSGmbH.com/
15-Jul-2016 Rev. A
Rating
150
±20
2.2
1.8
1.7
1.4
8
3.2
2
-55~150
62.5
125
156
39
Unit
V
V
A
A
W
°C
°C / W
Any changes of specification will not be informed individually.
Page 1 of 5




SeCoS

SST3215B Datasheet Preview

SST3215B Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SST3215B
2.2A, 150V, RDS(O ) 320m
-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage BVDSS
150
-
-
Gate-Threshold Voltage
VGS(th)
1
- 2.5
Gate-Body Leakage Current
Drain-Source Leakage Current
IGSS
IDSS
-
-
-
- ±100
-1
- 10
Drain-Source On-Resistance 3
RDS(ON)
-
260 320
290 380
Forward Transfer conductance
gfs
-
3.3
-
Total Gate Charge
Qg - 8.1 -
Gate-Source Charge
Qgs - 1 -
Gate-Drain (“Miller”)Charge
Turn-on Delay Time
Rise Time
Qgd
Td(on)
Tr
-
-
-
1.9
5.2
16.2
-
-
-
Turn-off Delay Time
Fall Time
Td(off)
Tf
-
-
20.8
15.6
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage 3
Continuous Source Current 1
Pulsed Source Current 2
Ciss - 298 -
Coss
-
32
-
Crss
-
19
-
Source-Drain Diode Characteristic
VSD -
IS -
- 1.2
- 1.7
ISM - - 5
Reverse Recovery Time
TRR - 45 -
Reverse Recovery Charge
QRR
-
Notes:
1. Surface mounted on 1 inch2 FR4 board with 2 oz copper.
2. The power dissipation is limited by 150°C junction temperature.
3. The data is tested by pulse: Pulse width300µs, duty cycle 2%.
16
-
Unit Test Condition
V VGS=0, ID=250µA
V VDS=VGS, ID=250µA
nA VGS=±20V
VDS=120V, VGS=0, TJ=25°C
µA
VDS=120V, VGS=0, TJ=55°C
VGS=10V, ID=1.5A
mΩ
VGS=4.5V, ID=1.5A
S VDS=15V, ID=1A
VDS=75V
nC VGS=10V
ID=1.7A
VDS=75V
nS
VGS=10V
RG=6Ω
ID=1A
VGS=0V
pF VDS=30V
f=1MHz
V IS=1.7A, VGS=0
A
nS IF=1.7A, dl/dt=100A/µs,
nC TJ=25°C
http://www.SeCoSGmbH.com/
15-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5


Part Number SST3215B
Description N-Channel MOSFET
Maker SeCoS
Total Page 5 Pages
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