SST6601-C N And P-Channel Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SST6601-C 3.7A, 30V, RDS(ON) 55mΩ -2.7A, -30V, RDS(ON) 110mΩ N And P-Channel Enhancement Mode Power MOSFET RoHS Compliant .
The SST6601-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge.

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Datasheet Specifications

Part number: SST6601-C
Manufacturer: SeCoS
File Size: 820.38 KB
Datasheet: SST6601-C-SeCoS.pdf
Description: N And P-Channel Enhancement Mode Power MOSFET

Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 6601 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SST6601-C Lead (Pb)-free and Halogen-free B F C H DG K J REF. A B C D

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SST6601-C And P-Channel Enhancement Mode Power MOSFET SeCoS

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