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SST6601-C - N And P-Channel Enhancement Mode Power MOSFET

General Description

The SST6601-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

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Datasheet Details

Part number SST6601-C
Manufacturer SeCoS
File Size 820.38 KB
Description N And P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SST6601-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SST6601-C 3.7A, 30V, RDS(ON) 55mΩ -2.7A, -30V, RDS(ON) 110mΩ N And P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SST6601-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SST6601-C meet the RoHS and Green Product requirement with full function reliability approved.