Download STT3599C Datasheet PDF
SeCoS Halbleitertechnologie GmbH
STT3599C
DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. TSOP-6 FEATURES - Low RDS(on) provides higher efficiency and extends battery life. - Low thermal impedance copper leadframe TSOP-6 saves board space. - Fast switching speed. - High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 30 -30 RDS(on) ( 0.063@VGS= 10V 0.090@VGS= 4.5V 0.112@VGS= -10V 0.172@VGS= -4.5V ID(A) 3.7 3.1 -2.7 -2.2 D1 S1 D2 65 4  Gate  Drain F CH DG K J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. -  Gate  Drain  123 G1 S2...