STT3930N Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package TSOP-6 3K Leader Size 7 inch TSOP-6 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. GD SS GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 IDM IS Power Dissipation 1 TA=25°C...