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SWE3134J-C Datasheet Preview

SWE3134J-C Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SWE3134J-C
0.75A, 20V, RDS(ON) 380m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Surface Mount Package
N-Channel Switch with Low RDS(ON)
Operated at Low Logic Level Gate Drive
ESD Protected Gate
WBFBP-03E
APPLICATIONS
Load/Power Switching
Interfacing Switching
Battery Management for Ultra Small
Portable Electronics
Logic Level Shift
MARKING
Top View
PACKAGE INFORMATION
Package
MPQ
WBFBP-03E
10K
Leader Size
7 inch
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.95 1.05
0.55 0.65
0.27 0.37
0.45REF.
0.27 0.37
0.45REF.
0.05REF.
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
0.05REF.
0.20 0.30
0.30 0.40
0.10 0.20
0.01 0.10
0.45 0.55
ORDER INFORMATION
Part Number
Type
SWE3134J-C
Lead (Pb)-free and Halogen-free
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Typical Gate-Source Voltage
VGS
Continuous Drain Current 1
ID
Pulsed Drain Current @tp=10µs
IDM
Total Power Dissipation 1
PD
Lead Temperature for Soldering Purposes
@1/8” from Case for 10s
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance from Junction-Ambient 1
RθJA
Ratings
20
±12
0.75
1.8
100
260
150, -55~150
1250
Unit
V
V
A
A
mW
°C
°C
°C/W
http://www.SeCoSGmbH.com/
14-Nov-2017 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SWE3134J-C Datasheet Preview

SWE3134J-C Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SWE3134J-C
0.75A, 20V, RDS(ON) 380m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage 2
Drain-Source On-Resistance 2
Forward Tranconductance 2
Diode Forward Voltage
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(ON)
gfs
VSD
Td(on)
Tr
Td(off)
Tf
Ciss
20
-
-
0.35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.6
-
6.7
4.8
17.3
7.4
79
Output Capacitance
Coss
-
13
Reverse Transfer Capacitance
Crss
-
9
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test: pulse width=300µs, duty cycle2%.
Max.
-
1
±20
1.1
380
450
800
-
1.2
-
-
-
-
-
-
-
Unit Test Conditions
V VGS=0, ID=250µA
µA VDS=20V, VGS=0
µA VDS=0, VGS= ±10V
V VDS=VGS, ID=250µA
VGS=4.5V, ID=0.65A
mVGS=2.5V, ID=0.55A
VGS=1.8V, ID=0.45A
S VDS=10V, ID=0.8A
V IS=0.15A, VDS=0
VDD=4.5V
nS
VGS=10V
RGEN=10
ID=500mA
VDS=16V
pF VGS=0
f=1MHz
http://www.SeCoSGmbH.com/
14-Nov-2017 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3



Part Number SWE3134J-C
Description N-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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