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SMS2020 - N-Channel MOSFET

General Description

The SMS2020 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMS2020 Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free 830mA, 20V N-Channel MOSFET DESCRIPTIONS The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. 1 SOT-23 A 3 3 L Top View 2 C B 1 2 MECHANICAL DATA     K E D Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage F REF. G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 H REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.