SMS501DE Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 0.03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most synchronous buck converter applications. Features Advanced high cell density Trench technology Super low gate charge Excellent Cd V/dt effect decline Green device available MARKING 501DE PACKAGE INFORMATION Package SOT-23 3K Leader Size 7 inch SOT-23 Top View 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95...