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SMS501DE - N-Channel MOSFET

General Description

SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most synchronous buck converter applications.

Key Features

  • Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMS501DE 0.03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most synchronous buck converter applications. FEATURES Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available MARKING 501DE PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.