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SeCoS Halbleitertechnologie

STT3810N Datasheet Preview

STT3810N Datasheet

N-Channel Enhancement Mode Mos.FET

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Elektronische Bauelemente
STT3810N
6A , 20V , RDS(ON) 24.5 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
Battery Powered Instruments
Portable Computing
Mobile Phones
Fast switch
GPS Units and Media Players
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
TA= 25°C
TA= 100°C
TA= 25°C
TA= 100°C
VGS
ID
IDM
IS
PD
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t10 sec
Steady State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Ratings
20
±10
6
3.6
20
1
0.83
0.3
-55 ~ 150
110
150
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
13-Aug-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS Halbleitertechnologie

STT3810N Datasheet Preview

STT3810N Datasheet

N-Channel Enhancement Mode Mos.FET

No Preview Available !

Elektronische Bauelemente
STT3810N
6A , 20V , RDS(ON) 24.5 m
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS
Parameter
Gate- Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Symbol
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
Min.
0.5
-
-
-
10
-
-
-
-
Typ.
-
-
-
-
-
-
-
10
0.7
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
Td(on)
Rise Time
Tr
Turn-off Delay Time
Td(off)
Fall Time
Tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Notes
1. Pulse testPW300μs duty cycle2%.
2. Guaranteed by design, not subject to production testing.
Dynamic
- 12.5
- 0.7
- 4.3
-5
- 14
- 30
-5
- 700
- 125
- 110
Max.
1
±100
1
30
-
24.5
38
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
nA
μA
A
m
S
V
Test Conditions
VDS=VGS, ID=250μA
VDS=0, VGS= ±10V
VDS=16V, VGS=0 V
VDS=16V, VGS=0 V, TJ= 85°C
VDS =5V, VGS=10V
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
VDS=10V, ID=6A
IS=1A, VGS=0V
VDS=10V,
nC VGS=4.5V,
ID=5.4A
VDD=10V,
VGEN=4.5V,
nS RGEN=6,
RL=10,
ID=1A
VDS=10V,
pF VGS=0,
f =1MHz
http://www.SeCoSGmbH.com/
13-Aug-2012 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number STT3810N
Description N-Channel Enhancement Mode Mos.FET
Maker SeCoS Halbleitertechnologie
Total Page 4 Pages
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