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STT3810N - N-Channel MOSFET

Key Features

  • TSOP-6 A E 6 5 4 Low rDS(on) trench technology Low thermal impedance Fast switching speed L Typical.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT3810N Elektronische Bauelemente 6A , 20V , RDS(ON) 24.5 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free Key Features:    TSOP-6 A E 6 5 4 Low rDS(on) trench technology Low thermal impedance Fast switching speed L Typical Applications:      Battery Powered Instruments Portable Computing Mobile Phones Fast switch GPS Units and Media Players B F DG 1 2 3 C K H J PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.